Pillar Type Silicon-Oxide-Nitride-Oxide-Silicon Flash Memory Cells with Modulated Tunneling Oxide

The scaling-down of twin Silicon-oxide-nitride-oxide-silicon (SONOS) memory

transistor has been extensively studied and its application to multi-bit/cell Flash device has been also presented. The scaling issues of SONOS memory is generally addressed in terms of both NAND and NOR Flash application. In the case of NAND SONOS Flash, there are some significant process integration issues about selection transistor, contact resistance, gate filling process margin, and dielec...

Interfacial structure in silicon nitride sintered with lanthanide oxide

Three independent research groups present a comparison of their structural analyses of prismatic interfaces in silicon nitride densified with the aid of lanthanide oxide Ln2O3. All three groups obtained scanning transmission electron microscope images which clearly reveal the presence of well-defined Ln segregation sites at the interfaces, and, moreover, reveal that these segregation sites are ...

Guided photoluminescence study ofNd-doped Silicon Rich Silicon Oxide and Silicon Rich Silicon Nitride waveguides

Planar waveguides made of Nd 3+ -doped silicon rich silicon oxide (SRSO) and silicon rich silicon nitride (SRSN) have been fabricated by reactive magnetron sputtering and characterized with special emphasis on the comparison of the guided photoluminescence (PL) properties of these two matrices. Guided fluorescence excited by top surface pumping at 488 nm on planar waveguides was measured as a f...

Thin-film amorphous silicon germanium solar cells with p- and n-type hydrogenated silicon oxide layers

Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric field. Bandgap grading of n-SiOx:H is designed to obtain a smooth transition of the energy band e...

Spin-dependent Resonant Tunneling in Ferromagnet-Oxide-Silicon Structures